產(chǎn)品用途：高純鉬平面靶材和旋轉(zhuǎn)靶材主要應(yīng)用于TFT-LCD制造中的柵極和源/漏電極。
Application:
High- purity molybdenum planar and rotary targets are mainly used in electrode gates and source / drain electrodes in TFT-LCD manufacturing.
產(chǎn)品性能參數(shù)/Product Property Parameters：
|
化學(xué)成分
Chemical Compositions
|
|
主含量，（%，不小于）
Main Content, %, min
|
Mo
|
99.95
|
99.97
|
|
雜質(zhì)含量
（質(zhì)量分?jǐn)?shù)），
（%，不大于）
Impurity Content (mass fraction), %, max
|
Al
|
0.0050
|
0.0010
|
|
Ca
|
0.0020
|
0.0020
|
|
Cr
|
0.0100
|
0.0020
|
|
Cu
|
0.0020
|
0.0020
|
|
Fe
|
0.0050
|
0.0020
|
|
K
|
-
|
0.0020
|
|
Mg
|
0.0020
|
0.0010
|
|
Na
|
-
|
0.0010
|
|
Ni
|
0.0050
|
0.0010
|
|
Si
|
0.0050
|
0.0020
|
|
W
|
0.0300
|
0.0300
|
|
S
|
0.0050
|
-
|
|
Cd
|
0.0001
|
-
|
|
C
|
0.0100
|
0.0030
|
|
O
|
0.0080
|
0.0040
|
|
N
|
0.0030
|
0.0010
|
|
注：鉬含量為100%減去表中所列雜質(zhì)元素實測含量的總和（不包含氣體元素）；需方如有特殊要求時，由供需雙方協(xié)商確定，并在合同（或訂貨單）中注明。
Note: Molybdenum content is the sum of 100% minus the measured content of impurity elements listed in the table (excluding gas elements). Special requirements will be agreed upon by the supplier and buyer, and indicated in the contract or purchase order.
|
其他性能Other Properties:
|
牌號
Grade
|
密度
Density
(g/cm3)
|
平均晶粒尺寸Average Grain Size (um)
|
粗糙度Roughness (um)
|
平面度
Flatness
(mm)
|
貼合率Bonding Rate
|
|
Mo
|
≥10.15
|
≤100
|
≤0.8
|
≤0.30
|
≥98%
|
尺寸Size:
|
形狀Shape
|
產(chǎn)品世代
|
靶材尺寸（mm）
|
|
平面Planar
|
G2.5
|
710*630*8
|
|
G 4.5
|
1200*1130*12
|
|
G5
|
1700*1431*12
|
|
G5.5
|
1950*1580*16
|
|
G6
|
2300*1800*14
|
|
2300*190*16
|
|
G8.5
|
2650*210*18
|
|
G10.5
|
3430*200*20
|
|
旋轉(zhuǎn)Rotary
|
G6
|
φ135/167*2158
|
|
G8.5
|
φ135/167*2692
|
注：如有特殊要求，雙方具體商定。
Note: Special requirements will be agreed upon by the supplier and buyer.
